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High-Speed Silicon PIN Photodiode
Product Page Documentation
     
   
hdrIA1012.gif

The IA1012 is a high-speed silicon PIN photodiode designed to meet requirements for IrDA SIR/MIR/FIR transceivers. This product is available to die and wafer customers for volume production.


Description  
Die Size 1200 x 1200 um
Wafer Diameter 6"
Wafer Thickness 265 um ±20
 
Parameter Min Typ Max Units
Cathode-Anode Voltage -0.5   7 V
Cathode-Anode Current (continuous)     5 mA
Dark Current (VR=5V)   .05 10 nA
Forward Voltage (IF=25uA)     0.7 V
Forward Voltage (IF=1mA) 0.6   0.8 V
Series Resistance (IF=1mA)   40   Ohm
Responsitivity (880nm source)   350   nA/Wm-2
Fall Time (90-10%)   40   ns
Rise Time   35   ns
Capacitance (VR=1V, 100kHz) 6 8 14 pF
  • Peak spectral sensitivity at 880nm
  • Fast response allows up to 4Mbps FIR IRDA
  • Low junction capacitance
  • Wide operating temperature range (-40 to +150°C)
  • IrDA transceivers
  • Optical data links
   
Product Page Documentation